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IXFP12N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFP12N50P

PolarPowerMOSFETHiperFET

Polar™PowerMOSFETHiperFET™ N-ChannelEnhancementModeAvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Corporation

IXFP12N50PM

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™(ElectricallyIsolatedTab) N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Plasticovermoldedtabforelectricalisolation •Internationalstandardpackage •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easyt

IXYS

IXYS Corporation

IXFT12N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRF™PowerMOSFETs F-Class:MegaHertzSwitching

IXYS

IXYS Corporation

IXTA12N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTA12N50P

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features •InternationalStandardPackages •Dynamicdv/dtRating •AvalancheRated •FastIntrinsicRectifier •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount

IXYS

IXYS Corporation

IXTH12N50

12AMPS,450-500V,0.4OM/0.5OM

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IXYS

IXYS Corporation

IXTH12N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH12N50A

StandardPowerMOSFET

Features ●Internationalstandardpackages ●LowRDS(on)HDMOS™process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTM12N50

12AMPS,450-500V,0.4OM/0.5OM

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IXYS

IXYS Corporation

详细参数

  • 型号:

    FMV12N50ESSC-P

  • 制造商:

    Fuji Electric

供应商型号品牌批号封装库存备注价格
TOSHIBA/东芝
TO-220F
22+
6000
十年配单,只做原装
询价
TOSHIBA/东芝
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
TOSHIBA
25+
TO-TO-220F
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
FUJITSU/富士通
23+
TO220F
50000
全新原装正品现货,支持订货
询价
FUJITSU/富士通
24+
TO-220F
60000
询价
FUJI
23+
TO220F
50000
全新原装正品现货,支持订货
询价
FUJITSU/富士通
23+
TO220F
43600
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FUJI
17+
TO220F
4000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
FUJI
23+
TO220F
28000
原装正品
询价
FUJI
23+
TO220F
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
更多FMV12N50ESSC-P供应商 更新时间2025-5-18 14:00:00