FIR60N10BPG规格书批发供应福斯特First-114ic电子网

首页 >FIR60N10BPG>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
FIR60N10BPG	文件：2.20455 Mbytes Page：7 Pages	100V N-Channel MOSFET 文件：2.20455 Mbytes 页数：7 Pages	FOSTER 福斯特半导体	FOSTER
FIR60N10BPG	文件：300 bytes Page：1 Pages	功率MOS/中低压功率MOS	First 福斯特	First
G60N10K	文件：712.57 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G60N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：712.57 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G60N10KA	文件：1.00698 Mbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G60N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：1.00698 Mbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G60N10T	文件：1.05189 Mbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：1.05189 Mbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD

更多FIR60N10BPG供应商更新时间2025-12-14 14:02:00