NPT IGBT

DESCRIPTION · NPT Technology · High Speed Switching & Low Power Loss · High Input Impedance APPLICATIONS • UPS , Inverter , Welder • AC&DC motor controls

文件：264.94 Kbytes 页数：3 Pages

ISC

无锡固电

Electrical Characteristics of IGBT

General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications Features • High Speed Switching • Low

文件：438.28 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Electrical Characteristics of IGBT

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A • High Input Impedance

文件：558.95 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

NPT-Trench IGBT

文件：682.03 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

1000 V, 60 A NPT Trench IGBT

文件：394.77 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

1000 V, 60 A NPT Trench IGBT

文件：394.77 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

1000V，60A，NPT 沟槽 IGBT

该 1000V NPT IGBT 采用安森美半导体的专属沟槽设计和先进 NPT 技术，提供卓越导通和开关性能、高雪崩耐用性和轻松并联操作。此器件为 UPS 和焊接机等硬开关应用提供最佳性能。 •高速开关\n•高输入阻抗\n•内置快速恢复二极管;

ONSEMI

安森美半导体

Electrical Characteristics of IGBT

ONSEMI

安森美半导体

Package：TO-264-3，TO-264AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1000V 60A 180W TO264

ONSEMI

安森美半导体

Package：TO-264-3，TO-264AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1000V 60A 180W TO264

ONSEMI

安森美半导体