Electrical Characteristics of IGBT

General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications Features • High Speed Switching • Low

文件：438.28 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Package：TO-264-3，TO-264AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1000V 60A 176W TO264

ONSEMI

安森美半导体

N-Channel IGBT with FRD

General Description The TSG60N100CE using proprietary trench design andadvanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.This device is well suited for the resonant or soft switching applicati

文件：431.7 Kbytes 页数：9 Pages

TSC

台湾半导体

NPT-Trench IGBT

文件：682.03 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =60A RDS(ON)

文件：693.35 Kbytes 页数：7 Pages

RECTRON

丽正国际