FGHL50T65MQD中文资料IGBT - 650 V 50 A FS4 medium switching speed IGBT数据手册ONSEMI规格书

描述 Description

ON Semiconductor's series of field stop 4th generation IGBTs offer the optimum performance by balancing vcesat and Eoff losses and well controllable turnoffVce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other Hi performance power conversion applications.

特性 Features

• Positive temperature co-efficient
• easy paralleling operation
• Low Vcesat
• low conduction losses
• Low Eon and Eoff
• Low switching losses

应用 Application

• PFC boost converter
• T-Type inverter
• I-Type Inverter
• HERIC invereters
• UPS
• Solar Inverters
• EV charging stations
• Energy storage systems

简介

FGHL50T65MQD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的FGHL50T65MQD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。