FGD3245G2-F085V数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

The FGD3245G2-F085C is an N-channel IGBT designed in Fairchild's EcoSPARK® 2 technology, which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers outstanding Vsat and SCIS Energy capability also at elevated operating temperatures. The logic level gate input is ESD protected and features an integrated gate resistor. An integrated zener-circuitry clamps the IGBT's collecter- to-emitter voltage at 450 V, which enables systems requiring a higher spark voltage.

特性 Features

• SCIS Energy = 320 mJ at TJ = 25°C
• Logic Level Gate Drive
• Low Saturation Voltage
• Qualified to AEC Q101
• RoHS Compliant

简介

FGD3245G2-F085V属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的FGD3245G2-F085V晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。