丝印：FGD3245G2；Package：DPAK3；ECOSPARK2 320 mJ, 450 V, N-Channel Ignition IGBT

General Description The FGB3245G2−F085 and FGD3245G2 are N−channel IGBTs designed in onsemi’s ECOSPARK−2 technology which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers out

文件：344.15 Kbytes 页数：10 Pages

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丝印：FGD3245G2；Package：TO252AA；EcoSPARK짰2 320mJ, 450V, N-Channel Ignition IGBT

文件：1.11875 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 450V 23A TO252AA

ONSEMI

安森美半导体

ECOSPARK2 320 mJ, 450 V, N-Channel Ignition IGBT

General Description The FGB3245G2−F085 and FGD3245G2 are N−channel IGBTs designed in onsemi’s ECOSPARK−2 technology which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers out

文件：344.15 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

EcoSPARK 2 Ignition IGBT 320 mJ, 450 V, N−Channel Ignition IGBT

Features • SCIS Energy = 320 mJ at TJ = 25°C • Logic Level Gate Drive • Low Saturation Voltage • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug A

文件：3.14207 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FGD3245G2；Package：DPAK；EcoSPARK 2 Ignition IGBT 320 mJ, 450 V, N-Channel Ignition IGBT

Features • SCIS Energy = 320 mJ at TJ = 25°C • Logic Level Gate Drive • Low Saturation Voltage • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug A

文件：2.24222 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

Ignition IGBT, N-Channel Ignition, DPAK, 450V, 1.3V, 320mJ,EcoSPARK® II

The FGD3245G2-F085C is an N-channel IGBT designed in Fairchild's EcoSPARK® 2 technology, which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers outstanding Vsat and SCIS Energy capa • SCIS Energy = 320 mJ at TJ = 25°C\n• Logic Level Gate Drive\n• Low Saturation Voltage\n• Qualified to AEC Q101\n• RoHS Compliant;

ONSEMI

安森美半导体

IGBT, N-Channel Ignition, DPAK, 1.3V, 320mJ,EcoSPARK® II

The FGD3245G2-F085C is an N-channel IGBT designed in Fairchild's EcoSPARK® 2 technology, which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers outstanding Vsat and SCIS Energy capa • SCIS Energy = 320 mJ at TJ = 25°C\n• Logic Level Gate Drive\n• Low Saturation Voltage\n• Qualified to AEC Q101\n• RoHS Compliant;

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：ECOSPARK2 IGN-IGBT TO252

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 450V DPAK

ONSEMI

安森美半导体