FGD3245G2-F085分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF中文资料

FGD3245G2-F085属于分立半导体产品的晶体管-UGBT、MOSFET-单。由安森美半导体公司制造生产的FGD3245G2-F085晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。

General Description

The FGB3245G2−F085 and FGD3245G2 are N−channel IGBTs

designed in onsemi’s ECOSPARK−2 technology which helps in

eliminating external protection circuitry. The technology is optimized

for driving the coil in the harsh environment of automotive ignition

systems and offers out−standing Vsat and SCIS Energy capability also

at elevated operating temperatures. The logic level gate input is ESD

protected and features an integrated gate resistor. An integrated

zener−circuitry clamps the IGBT’s collecter−to−emitter voltage at

450 V which enables systems requiring a higher spark voltage

Features

• SCIS Energy = 320 mJ at TJ = 25°C

• Logic Level Gate Drive

• Low Saturation Voltage

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Automotive lgnition Coil Driver Circuits

• Coil On Plug Applications