FGH40N65UFDTU-F085

Marking：FGH40N65UFDTU；Package：TO-247；IGBT - Field Stop 650 V, 40 A

Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’sfield stopIGBTsoffertheoptimumperformanceforAutomotiveChargers, Inverter,andotherapplicationswherelowconductionandswitching lossesareessential. Features •HighCurrentCapability •LowSaturationVolt

FGH40T65SHDF-F155

Marking：FGH40T65SHDF；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 40 A

Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’snew seriesoffieldstop3rdgenerationIGBTsoffersuperiorconduction andswitchingperformanceandeasyparalleloperation.Thisdevice iswellsuitedfortheresonantorsoftswitchingapplicationsuchas inductionhea

FGH40T65SQD-F155

Marking：FGH40T65SQD；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 40 A

Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’snew seriesoffieldstop4thgenerationIGBTsoffertheoptimum performanceforsolarinverter,UPS,welder,telecom,ESSandPFC applicationswherelowconductionandswitchinglossesareessential. Features •MaxJuncti

FGH50T65UPD

Marking：FGH50T65UPD；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 50 A

Description UsinginnovativefieldstoptrenchIGBTtechnology, ONSemiconductor’snewseriesoffield−stoptrenchIGBTsoffer optimumperformanceforsolarinverter,UPS,welder,anddigital powergeneratorwherelowconductionandswitchinglossesare essential. Features •MaximumJunctio

FGH60N60SFDTU

Marking：FGH60N60SFD；Package：TO-247；600 V, 60 A Field Stop IGBT

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.3V@IC=60A •HighInputImpedance •FastSwitching •RoHSCompliant GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstop IGBTsoffertheoptimumperformanceforsolarinverter,UP

FGH60N60SFDTU-F085

Marking：FGH60N60SFDTU；Package：TO-247；IGBT - Field Stop 600 V, 60 A

Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features •HighCurrentCapability •LowS

FGH60N60SMD

Marking：FGH60N60SMD；Package：TO-247；IGBT - Field Stop 600 V, 60 A

Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’snew seriesoffieldstop2ndgenerationIGBTsoffertheoptimum performanceforsolarinverter,UPS,welder,telecom,ESSandPFC applicationswherelowconductionandswitchinglossesareessential. Features •Maximum

FGH75T65SHDTL4

Marking：FGH75T65SHDTL4；Package：TO-247-4LD；IGBT - Field Stop, Trench 650 V, 75 A

Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’snew seriesoffieldstop3rdgenerationIGBTsoffertheoptimum performanceforsolarinverter,UPS,welder,telecom,ESSandPFC applicationswherelowconductionandswitchinglossesareessential. Features •Maximum

FGH75T65SQDT-F155

Marking：FGH75T65SQDT；Package：TO-247-3LD；IGBT - Field Stop, Trench 650 V, 75 A

Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’snew seriesoffieldstop4thgenerationIGBTsoffertheoptimum performanceforsolarinverter,UPS,welder,telecom,ESSandPFC applicationswherelowconductionandswitchinglossesareessential. Features •MaxJuncti

FGH75T65SQDTL4

Marking：FGH75T65SQDTL4；Package：TO-247-4LD；IGBT - Field Stop, Trench 650 V, 75 A

Description UsingnovelfieldstopIGBTtechnology,onsemi’snewseriesof fieldstop4thgenerationIGBTsoffertheoptimumperformancefor solarinverter,UPS,welder,telecom,ESSandPFCapplicationswhere lowconductionandswitchinglossesareessential. Features •MaximumJunctionTem