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FGB3056-F085

Marking:FGB3056;Package:TO-263AB;EcoSPARK® 300mJ, 560V, N-Channel Ignition IGBT

Features -SCISEnergy=300mJatTJ=25oC -LogicLevelGateDrive Applications -AutomotivelgnitionCoilDriverCircuits -CoilOnPlugApplications

ONSEMION Semiconductor

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FGB3245G2-F085

Marking:FGB3245G2;Package:D2PAK-3;ECOSPARK2 320 mJ, 450 V, N-Channel Ignition IGBT

GeneralDescription TheFGB3245G2−F085andFGD3245G2areN−channelIGBTs designedinonsemi’sECOSPARK−2technologywhichhelpsin eliminatingexternalprotectioncircuitry.Thetechnologyisoptimized fordrivingthecoilintheharshenvironmentofautomotiveignition systemsandoffersout

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FGB3440G2-F085

Marking:FGB3440G2;Package:TO-263AB;EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT

Features -SCISEnergy=335mJatTJ=25oC -LogicLevelGateDrive -QualifiedtoAECQ101 -RoHSCompliant Applications -AutomotivelgnitionCoilDriverCircuits -CoilOnPlugApplications

ONSEMION Semiconductor

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FGB40T65SPD-F085

Marking:FGB40T65SPD;Package:D2PAK-3;IGBT - Field Stop, Trench 650 V, 40 A

GeneralDescription Usingthenovelfieldstop3rdgenerationIGBTtechnology, FGH40T65SPD−F085offerstheoptimumperformancewithbothlow conductionlossandswitchinglossforahighefficiencyoperationin variousapplications,whileprovides50Vhigherblockingvoltageand ruggedhigh

ONSEMION Semiconductor

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FGD2736G3-F085

Marking:FGD2736G3;Package:TO-252AA;EcoSPARKTM 3 270mJ, 360V, N-Channel Ignition IGBT

Features SCISEnergy=270mJatTJ=25°C SCISEnergy=170mJatTJ=150°C LogicLevelGateDrive RoHSCompliant Applications AutomotiveIgnitionCoilDriverCircuits CoilOnPlugApplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FGD3040G2-F085

Marking:FGD3040G2;Package:DPAK3;ECOSPARK 2 300 mJ, 400 V, N-Channel Ignition IGBT

Features •SCISEnergy=300mJatTJ=25°C •LogicLevelGateDrive •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant Applications •AutomotiveIgnitionCoilDriverCircuits •CoilOnPlugApplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FGD3040G2-F085V

Marking:FGD3040G2;Package:DPAK;EcoSPARK 2 Ignition IGBT 300 mJ, 400 V, N-Channel Ignition IGBT

Features •SCISEnergy=300mJatTJ=25°C •LogicLevelGateDrive •AEC−Q101QualifiedandPPAPCapable •RoHSCompliant Applications •AutomotiveIgnitionCoilDriverCircuits •CoilonPlugApplication

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FGD3050G2V

Marking:FGD3050G2;Package:DPAK;EcoSPARK 2 Ignition IGBT 300 mJ, 500 V, N-Channel Ignition IGBT

Features •SCISEnergy=300mJatTJ=25°C •LogicLevelGateDrive •AEC−Q101QualifiedandPPAPCapable •TheseDeviceisPb−FreeandareRoHSCompliant Applications •AutomotiveIgnitionCoilDriverCircuits •HighCurrentIgnitionSystem •CoilonPlugApplication

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FGD3245G2-F085

Marking:FGD3245G2;Package:DPAK3;ECOSPARK2 320 mJ, 450 V, N-Channel Ignition IGBT

GeneralDescription TheFGB3245G2−F085andFGD3245G2areN−channelIGBTs designedinonsemi’sECOSPARK−2technologywhichhelpsin eliminatingexternalprotectioncircuitry.Thetechnologyisoptimized fordrivingthecoilintheharshenvironmentofautomotiveignition systemsandoffersout

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FGD3245G2-F085V

Marking:FGD3245G2;Package:DPAK;EcoSPARK 2 Ignition IGBT 320 mJ, 450 V, N-Channel Ignition IGBT

Features •SCISEnergy=320mJatTJ=25°C •LogicLevelGateDrive •LowSaturationVoltage •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant Applications •AutomotiveIgnitionCoilDriverCircuits •HighCurrentIgnitionSystem •CoilonPlugA

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    FG

  • 制造商:

    Amphenol Corporation

  • 制造商:

    Amphenol Tuchel

  • 功能描述:

    REMOVAL TOOL

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
UMLP-24
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
24+
NA/
12638
优势代理渠道,原装正品,可全系列订货开增值税票
询价
FAIRCHILD/仙童
25+
UMLP-24
12638
原装正品,假一罚十!
询价
N/A
23+
6000
专注配单,只做原装进口现货
询价
N/A
23+
6000
专注配单,只做原装进口现货
询价
DIODES INCORPORATED
24+
con
35960
查现货到京北通宇商城
询价
DIODES INCORPORATED
24+
con
35960
查现货到京北通宇商城
询价
ROHM/罗姆
23+
SOD323
15000
全新原装现货,价格优势
询价
BOSCH/博世
LGA10
6698
询价
ST
23+
原厂原封
16900
正规渠道,只有原装!
询价
更多FG供应商 更新时间2025-6-22 11:00:00