丝印：FFSM0665A；Package：PQFN；Silicon Carbide Schottky Diode

文件：328.46 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：4-PowerTSFN；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 6A SIC SBD

ONSEMI

安森美半导体

Silicon Carbide Schottky Diode

文件：199.58 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide Schottky Diode 650 V, 6 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：302.57 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：440.05 Kbytes 页数：5 Pages

PANJIT

強茂