丝印：FFSP2065B；Package：TO-220-2L；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-220-2L

Features • Max Junction Temperature 175°C • Avalanche Rated 94 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications •

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安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-220-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the • Max Junction Temperature\n• 175 C\n• Avalanche Rated\n• 94 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery/No Forward Recovery\n• Pb-Free, Halogen Free/BFR Free, and RoHS Compliant;

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安森美半导体

Package：TO-220-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE TO220 650V

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安森美半导体

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-220-3L

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and higher\nreliability compared to Silicon. No reverse recovery current,\ntemperature independent switching characteristics, and excellent\nthermal performance sets Silicon Carbide as • Max Junction Temperature 175°C\n• Tj = 175°C\n• Avalanche Rated 49 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery/No Forward Recovery\n• AEC−Q101 Qualified\n• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Complian;

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安森美半导体

汽车碳化硅 (SiC) 肖特基二极管，650 V

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as • Max Junction Temperature 175 oC\n• Avalanche Rated 94 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 Qualified and PPAP Capable;

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安森美半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE 650V 20A

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安森美半导体

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE 650V

ONSEMI

安森美半导体