丝印：FFSP0865A；Package：TO-220-2LD；Silicon Carbide Schottky Diode 650 V, 8 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

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ONSEMI

安森美半导体

Schottky Barrier Rectifier

FEATURES ·High Surge Current Capacity ·Easy Of Paralleling ·No Reverse Recovery APPLICATIONS ·SMPS ·UPS ·Power Switching Circuits

文件：272.97 Kbytes 页数：2 Pages

ISC

无锡固电

SiC 二极管，650V，8A，TO-220-2

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

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安森美半导体

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 13A TO220-2

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安森美半导体