SiC 二极管 - 650V，20A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

ONSEMI

安森美半导体

SiC Schottky Barrier Diode

FEATURES · High Surge Current Capacity · No Reverse Recovery/No Forward Recovery · Ease of Paralleling · No Reverse Recovery APPLICATIONS · General Purpose · SMPS, Solar Inverter, UPS · Power Switching Circuits

文件：426.58 Kbytes 页数：3 Pages

ISC

无锡固电

Package：TO-220-2 整包；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 20A SIC SBD

ONSEMI

安森美半导体

Voltage Repeater

文件：853.78 Kbytes 页数：5 Pages

PF

倍加福

Armoire autoportante modulaire en acier doux de type 12

文件：174.16 Kbytes 页数：4 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

PAINTED TEXTURED GRAY RAL 7035

文件：111.96 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司