FFSP05120A

SiC 二极管，1200V，5A，TO-220-2; • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery\n;

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

FFSP05120A

丝印：FFSP05120A；Package：TO-220-2LD；Silicon Carbide Schottky Diode 1200 V, 5 A

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

FFSP05120A

Silicon Carbide Schottky Diode

FFSP05120A

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1.2KV TO220-2

FFSP05120A_V01

Silicon Carbide Schottky Diode 1200 V, 5 A

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

LFUSCD05120A

Enhancedsurgecapability

LSP05120

SurgeProtectionModuleLEDLightingSurgeProtectionModule>LSP05

LSP05120

LEDLightingSurgeProtectionModule>LSP05

MSICSN05120

SILICONCARBIDESCHOTTKYPOWERRECTIFIER

MSiCSN05120CA

SILICONCARBIDEDUALSCHOTTKYPOWERRECTIFIER