Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-3L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • High UIS and Surge Current Capacity\n• Avalanche Rated 100 mJ\n• High Junction Temperature\n• Tj = 175 °C\n•High Surge Current Capacity\n•No Reverse Recovery / No Forward Recovery;

ONSEMI

安森美半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SIC 1200V 10A TO247

ONSEMI

安森美半导体

Package：TO-247-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：1200V 20A AUTO SIC SBD

ONSEMI

安森美半导体