丝印：FFSH20120A；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：332.85 Kbytes 页数：6 Pages

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安森美半导体

丝印：FFSH20120A；Package：TO-247-2LD；Silicon Carbide Schottky Diode 1200 V, 20 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：282.87 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSH20120A；Package：TO-247-2LD；Silicon Carbide Schottky Diode

文件：432.79 Kbytes 页数：7 Pages

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安森美半导体

Silicon Carbide Schottky Diode

文件：683.57 Kbytes 页数：7 Pages

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安森美半导体

丝印：FFSH20120ADN；Package：TO-247-3LD；Silicon Carbide Schottky Diode

文件：336.38 Kbytes 页数：6 Pages

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安森美半导体

丝印：FFSH20120ADN；Package：TO-247-3LD；Silicon Carbide Schottky Diode

文件：310 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：332.85 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

碳化硅肖基特二极管

碳化硅肖特基二极管使用全新技术，相比硅材，可提供卓越的开关性能和更高的可靠性。 无反向恢复电流、随温度变化的开关特性，以及出色的热性能使碳化硅成为新一代功率半导体。 系统优势包括效率最高、运行频率更快、功率密度增加、电磁干扰减少、以及系统大小和成本降低。 •最大结温 175 °C\n•雪崩额定值 200 mJ\n•高浪涌电流能力\n•正温度系数\n•易于并联\n•无反向恢复/无正向恢复;

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安森美半导体

Package：TO-247-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1.2KV 30A TO247-2

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安森美半导体

SiC，双裸片，1200 V，20 A

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as • Max Junction Temperature 175 °C\n• Avalanche Rated 100 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 qualified and PPAP Capable;

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安森美半导体