SiC 硅肖特基二极管，1200V，20A

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as • Max Junction Temperature 175 °C\n• Avalanche Rated 100 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 qualified and PPAP Capable;

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安森美半导体

丝印：FFSH20120A；Package：TO-247-2LD；Silicon Carbide Schottky Diode

文件：432.79 Kbytes 页数：7 Pages

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安森美半导体

Package：TO-247-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：1200V 20A AUTO SIC SBD

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安森美半导体

Silicon Carbide Schottky Diode 1200 V, 20 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：316.72 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide Schottky Diode

文件：366.15 Kbytes 页数：6 Pages

ONSEMI

安森美半导体