FFSH20120A-F085中文资料SiC 硅肖特基二极管，1200V，20A数据手册ONSEMI规格书

描述 Description

Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size & cost.

特性 Features

• Max Junction Temperature 175 °C
• Avalanche Rated 100 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
• AEC-Q101 qualified and PPAP Capable

应用 Application

• Automotive HEV-EV Onboard Chargers
• Automotive HEV-EV DC-DC Converters
• Automotive HEV-EV Onboard Chargers

简介

FFSH20120A-F085属于分立半导体产品的二极管-整流器-单。由制造生产的FFSH20120A-F085二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。