FFSH20120ADN-F155中文资料Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-3L数据手册ONSEMI规格书

描述 Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

特性 Features

• High UIS and Surge Current Capacity
• Avalanche Rated 100 mJ
• High Junction Temperature
• Tj = 175 °C
•High Surge Current Capacity
•No Reverse Recovery / No Forward Recovery

应用 Application

• PFC
• Boost Inverter
• Solar
• UPS

简介

FFSH20120ADN-F155属于分立半导体产品的二极管-整流器-阵列。由制造生产的FFSH20120ADN-F155二极管 - 整流器 - 阵列二极管和整流器阵列系列中的产品可在单个封装内包含两个或多个分立二极管。其特征表述类似于单个分立二极管，并增加了“二极管配置”属性，该属性指示设备中二极管之间任何内部连接的存在情况和特性。请注意，具有全桥配置的阵列被专门排除在外，并列为单独的产品系列。