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FFSH1065B-F155中文资料Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L数据手册ONSEMI规格书
FFSH1065B-F155规格书详情
描述 Description
EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
特性 Features
• Max Junction Temperature 175C
• Avalanche Rated 51 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• No Reverse Recovery / No Forward Recovery
• Low Vf @ TJ:175 °C
应用 Application
• Industrial
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi |
2025+ |
TO-247-2L |
55740 |
询价 | |||
ON(安森美) |
24+ |
标准封装 |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ON/安森美 |
21+ |
TO-247 |
26880 |
公司只有原装 |
询价 | ||
ON(安森美) |
25+ |
标准封装 |
8800 |
公司只做原装,详情请咨询 |
询价 | ||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
询价 | ||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271515邹小姐 |
询价 | ||
ON/安森美 |
23+ |
TO-247 |
8080 |
原装正品,支持实单 |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON Semiconductor |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |