TIGER EYE™ FLAT IDC WIRE CABLES (1.27 mm) .050 PITCH

文件：275.3 Kbytes 页数：1 Pages

SAMTEC

美国申泰

丝印：FFSD0665B；Package：DPAK；Silicon Carbide Schottky Diode 650 V, 6 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：373.57 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide Schottky Diode 650 V, 6 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：373.57 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSD08120A；Package：DPAK-3L；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：415.57 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：415.57 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSD0865B；Package：DPAK；Silicon Carbide Schottky Diode 650 V, 8 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：398.23 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide Schottky Diode 650 V, 8 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：398.23 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：FFSD10120A；Package：DPAK-3L；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, DPAK-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：399.59 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, DPAK-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：399.59 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SiC Schottky Diode

DESCRIPTION ·High Surge Current Capacity ·No Reverse Recovery/No Forward Recovery ·Ease of Paralleling APPLICATIONS ·General Purpose ·SMPS, Solar Inverter, UPS ·Power Switching Circuits

文件：405.86 Kbytes 页数：3 Pages

ISC

无锡固电