丝印：FFSD0665B；Package：DPAK；Silicon Carbide Schottky Diode 650 V, 6 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：373.57 Kbytes 页数：6 Pages

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安森美半导体

丝印：FFSD0665B；Package：DPAK；Silicon Carbide Schottky Diode

文件：306.53 Kbytes 页数：6 Pages

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安森美半导体

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 6A, 650V, D2, DPAK

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as • Max Junction Temperature 175 oC\n• PPAP capable\n• Avalanche Rated 24.5mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• AEC-Q101 Qualified;

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安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V 6A SIC SBD GEN1.5

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安森美半导体

Silicon Carbide Schottky Diode 650 V, 6 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：373.57 Kbytes 页数：6 Pages

ONSEMI

安森美半导体