60V P-Channel Logic Level PowerTrench MOSFET

General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –1.25 A, –60 V. RDS(ON)= 0.170 Ω@ VGS= –10 V RDS(ON)= 0.230 Ω@ VGS= –4.5 V •Fast switching spe

文件：385.09 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

60V P-Channel Logic Level PowerTrench MOSFET

ONSEMI

安森美半导体

丝印：618P；Package：SOT-23；60V P-Channel Power MOSFET

Application ● Load/Power Switching ● Interfacing Switching ● Logic Level Shift

文件：3.48411 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

60V P-Channel Logic Level PowerTrench MOSFET

General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features • –1.25 A, –60 V. RDS(ON)= 0.170 Ω@ VGS= –10 V RDS(ON)= 0.230 Ω@ VGS= –4.5 V •Fast switching spe

文件：385.09 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

60V，P 沟道，PowerTrench® MOSFET，-1.25A，170mΩ

该60V P沟道MOSFET采用飞兆高压PowerTrench工艺制成。 已针对电源管理应用进行了优化。 •–1.25 A, –60 V. RDS(ON) = 0.200Ω @ VGS = –10 V, RDS(ON) = 0.230Ω @ VGS = –4.5 V\n• RDS(ON) = 0.200Ω @ VGS = –10 V\n• RDS(ON) = 0.230Ω @ VGS = –4.5 V\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)。;

ONSEMI

安森美半导体