FDN5618中文资料仙童半导体数据手册PDF规格书

General Description

This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

特性 Features

• –1.25 A, –60 V. RDS(ON)= 0.170 Ω@ VGS= –10 V

RDS(ON)= 0.230 Ω@ VGS= –4.5 V

•Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

Applications

•DC-DC converters

•Load switch

•Power management