FDN361中文资料仙童半导体数据手册PDF规格书

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

特性 Features

• 1.8 A, 30 V. RDS(on) = 0.100 Ω @ VGS = 10 V RDS(on) = 0.150 Ω @ VGS = 4.5 V.

• Low gate charge ( 2.1nC typical ).

• Fast switching speed.

• High performance trench technology for extremely low RDS(on).

• High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30 higher power handling capability.

Applications

• DC/DC converter

• Load switch

• Motor drives