FDN359中文资料仙童半导体数据手册PDF规格书

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

特性 Features

■ 2.7 A, 30 V.

RDS(ON) = 0.046 W @ VGS = 10 V

RDS(ON) = 0.060 W @ VGS = 4.5 V.

■ Very fast switching.

■ Low gate charge (5nC typical).

■ High power version of industry standard SOT-23

package. Identical pin out to SOT-23 with 30 higher

power handling capability.