FDN352AP中文资料仙童半导体数据手册PDF规格书
FDN352AP规格书详情
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
特性 Features
■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V
–1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V
■ High performance trench technology for extremely low RDS(ON).
■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability.
Applications
■ Notebook computer power management
产品属性
- 型号：
FDN352AP
- 功能描述：
MOSFET SINGLE PCH TRENCH MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SOT-23 |
97048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
ONSEMI/安森美 |
25+ |
SOT-23 |
34783 |
ONSEMI/安森美全新特价FDN352AP即刻询购立享优惠#长期有货 |
询价 | ||
23+ |
16277 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||||
Fairchild |
23+ |
NA |
6800 |
原装正品,力挺实单 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ON/安森美 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
ON |
21+ |
SOT23-3 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
TECH PUBLIC(台舟) |
24+ |
SOT-23 |
5000 |
诚信服务,绝对原装原盘。 |
询价 | ||
ON/安森美 |
19+ |
SOT23 |
60000 |
询价 | |||
ON |
21+ |
8080 |
只做原装,质量保证 |
询价 |
