FDN359BN-F095中文资料仙童半导体数据手册PDF规格书

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

特性 Features

• 2.7 A, 30 V. RDS(ON)= 0.046 Ω @ VGS = 10 V RDS(ON)= 0.060 Ω @ VGS = 4.5 V

• Very fast switching speed.

• Low gate charge (5nC typical)

• High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30 higher power handling capability.