P−CHANNEL MOSFET

Features • Low gate charge (4 nC typical) • High performance trench technology for extremely low R DS(ON) . • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability. • VDS (V) = -30V • ID = -1.5 A • RDS(ON) 90m (VGS = -

文件：324.26 Kbytes 页数：5 Pages

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翊欧

P-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：85.26 Kbytes 页数：4 Pages

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仙童半导体

P-Channel Logic Level Enhancement Mode Field Effect Transistor

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丝印：358；Package：SOT-23；P−CHANNEL MOSFET

Features • Low gate charge (4 nC typical) • High performance trench technology for extremely low R DS(ON) . • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30 higher power handling capability. • VDS (V) = -30V • ID = -1.5 A • RDS(ON) 90m (VGS = -

文件：324.26 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

P-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：85.26 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-1.5A，125mΩ

此P沟道逻辑电平MOSFET采用飞兆半导体先进的Power Trench工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 此类器件非常适合便携式电子应用： 负载开关和功率管理、电池充电电路和DC/DC转换。 •-1.5 A，-30 V\n•RDS(ON) = 125 mΩ @ VGS = 10 V\n•RDS(ON) = 200 mΩ @ VGS = 4.5 V\n•低栅极电荷（4nC，典型值）\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率版本的工业标准SOT-23封装。 相同的SOT-23引脚，可将功率处理能力提高30%。;

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安森美半导体