FDN358P

Marking：358；Package：SOT-23；P−CHANNEL MOSFET

Features •Lowgatecharge(4nCtypical) •Highperformancetrenchtechnologyforextremely lowRDS(ON). •HighpowerversionofindustryStandardSOT-23 package.Identicalpin-outtoSOT-23with30 higherpowerhandlingcapability. •VDS(V)=-30V •ID=-1.5A •RDS(ON)90m(VGS=-

LM358D

Marking：358；Package：SO-8；Low Power Dual Operational Amplifiers

■Internallyfrequencycompensated ■LargeDCvoltagegain:100dB ■Widebandwidth(unitygain):1.1mHz (temperaturecompensated) ■Verylowsupplycurrent/op(500μA)essentially independentofsupplyvoltage ■Lowinputbiascurrent:20nA (temperaturecompensated) ■Lowinputoffsetvolta

LM358DMR2G

Marking：358；Package：Micro8；Single Supply Dual Operational Amplifiers

UtilizingthecircuitdesignsperfectedforQuadOperationalAmplifiers,thesedualoperationalamplifiersfeaturelowpowerdrain,acommonmodeinputvoltagerangeextendingtoground/VEE,andsinglesupplyorsplitsupplyoperation.TheLM358seriesisequivalenttoone−halfofanLM324. These

LM358DT

Marking：358；Package：SO8；Low-power dual operational amplifiers

Features Frequencycompensationimplementedinternally LargeDCvoltagegain:100dB Widebandwidth(unitygain):1.1MHz(temperaturecompensated) Verylowsupplycurrentperchannelessentiallyindependentofsupplyvoltage Lowinputbiascurrent:20nA(temperaturecompensated) Lowinput

LM358DT

Marking：358；Package：SO-8；Low Power Dual Operational Amplifiers

■Internallyfrequencycompensated ■LargeDCvoltagegain:100dB ■Widebandwidth(unitygain):1.1mHz (temperaturecompensated) ■Verylowsupplycurrent/op(500μA)essentially independentofsupplyvoltage ■Lowinputbiascurrent:20nA (temperaturecompensated) ■Lowinputoffsetvolta

LM358PT

Marking：358；Package：TSSOP-8；Low Power Dual Operational Amplifiers

■Internallyfrequencycompensated ■LargeDCvoltagegain:100dB ■Widebandwidth(unitygain):1.1mHz (temperaturecompensated) ■Verylowsupplycurrent/op(500μA)essentially independentofsupplyvoltage ■Lowinputbiascurrent:20nA (temperaturecompensated) ■Lowinputoffsetvolta

LM358PT

Marking：358；Package：SO8；Low-power dual operational amplifiers

Features Frequencycompensationimplementedinternally LargeDCvoltagegain:100dB Widebandwidth(unitygain):1.1MHz(temperaturecompensated) Verylowsupplycurrentperchannelessentiallyindependentofsupplyvoltage Lowinputbiascurrent:20nA(temperaturecompensated) Lowinput

LM358DMR2G

Marking：358；Package：Micro8；Single Supply Dual Operational Amplifiers

LM358DMR2G

Marking：358；Package：Micro8；Single Supply Dual Operational Amplifiers

1SMB5358

Marking：358B；Package：DO-214AA；SURFACE MOUNT SILICON ZENER DIODES

FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-O •Pbfreeproductareavailable:99Sn