IPP35CN10NG芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPI35CN10NG	文件：860 Kbytes Page：12 Pages	丝印：35CN10N；Package：PG-TO262-3；N-channel, normal level Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：860 Kbytes 页数：12 Pages	Infineon 英飞凌	Infineon
IPP35CN10NG	文件：860 Kbytes Page：12 Pages	丝印：35CN10N；Package：PG-TO220-3；N-channel, normal level Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：860 Kbytes 页数：12 Pages	Infineon 英飞凌	Infineon
35CN10N	文件：860 Kbytes Page：12 Pages	N-channel, normal level Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：860 Kbytes 页数：12 Pages	Infineon 英飞凌	Infineon

更多35CN10N供应商更新时间2025-9-21 10:50:00