3.0SMC36

Marking：36；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

ASD36C

Marking：36；Package：SOD-323；1-Line Bi-directional TVS Diode

Features 500Wpeakpulsepower(8/20μs) Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:3.3V，5V,8V,12V,15V,24V, 36V,40V Ultralowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV C

AZ4326-01F.R7G

Marking：36；Package：DFN2020P2E；Transient Voltage Suppressing Device For ESD/Transient/Surge Protection

Features
ESDProtectfor1LinewithUnidirectional.
ProvideESDprotectionforalineto IEC61000-4-2(ESD)±30kV(air/contact), IEC61000-4-5(Lightning)46A(8/20μs)
Suitablefor,26Vandbelow,operatingvoltage applications
2.0mmx2.0mmDFNpackagesavesboard space
Prote

BZX384-A16

Marking：36；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

BZX384-A16

Marking：36；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A)tolerancerange.Theseries includes37breakdownvoltageswithnominalworkingvoltagesfrom2.4Vto

BZX384-A16-Q

Marking：36；Package：SC-76；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

CMZ36A

Marking：36；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications •Surgeabsorber Features (1)Powerdissipation:PD=2W (2)Zenervoltage:Vz=12to51V (3)Theuseofsmall,thinsurface-mountpackageisoptimumwayforhigh-densitymounting. Nickname:M-FLATTM

DTA023JEB

Marking：36；Package：EMT3F；100mA/-50V Digital transistors(with built-in resistors)

Features 1)Built-InBiasingResistors,R1=2.2kΩ,R2=47kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy.

DTA023JM

Marking：36；Package：VMT3；100mA/-50V Digital transistors(with built-in resistors)

Features 1)Built-InBiasingResistors,R1=2.2kΩ,R2=47kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy.

DTA023JUB

Marking：36；Package：UMT3F；100mA/-50V Digital transistors(with built-in resistors)

Features 1)Built-InBiasingResistors,R1=2.2kΩ,R2=47kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy.