35N65G2V

型号：SCTWA35N65G2V；Package：HiP247；Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 long leads package

Features •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Switchingmodepowersupply •DC-DCconverters •Industrialmotorcontrol

35N65G2V

型号：SCTL35N65G2V；Package：PowerFLAT8x8HV；Silicon carbide Power MOSFET 650 V, 55 m廓 typ., 40 A in a PowerFLAT 8x8 HV package

35N65G2VAG

型号：SCTWA35N65G2VAG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package

Features •AEC-Q101qualified •Veryfastandrobustintrinsicbodydiode •Lowcapacitance Applications •Switchingmodepowersupply •EVchargers •DC-DCconverters Description ThissiliconcarbidePowerMOSFETdevicehasbeendevelopedusingST’s advancedandinnovative2ndgener