Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction t • Very fast and robust intrinsic body diode \n• Low capacitances \n• Source sensing pin for increased efficiency;

ST

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丝印：35N65G2V；Package：PowerFLAT8x8HV；Silicon carbide Power MOSFET 650 V, 55 m廓 typ., 40 A in a PowerFLAT 8x8 HV package

文件：323.95 Kbytes 页数：14 Pages

STMICROELECTRONICS

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Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package

Features • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200°C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control

文件：205.23 Kbytes 页数：12 Pages

STMICROELECTRONICS

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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package

Features • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Low capacitance Applications • Switching mode power supply • EV chargers • DC-DC converters Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generatio

文件：206.14 Kbytes 页数：12 Pages

STMICROELECTRONICS

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Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 long leads package

Features • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • DC-DC converters • Industrial motor control

文件：479.53 Kbytes 页数：12 Pages

STMICROELECTRONICS

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