N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，166A，2.7mΩ

This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Shielded Gate MOSFET Technology\n• Max rDS(on) = 2.7 mΩ at VGS = 10 V, ID = 68 A\n• Max rDS(on) = 6.7 mΩ at VGS = 6 V, ID = 34 A\n• 50% lower Qrr than other MOSFET suppliers\n• Lower switching noise/EMI\n• MSL1 robust package design\n• 100% UIL tested\n• RoHS Compliant;

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.1 m, 181 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

文件：146.56 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.55 m, 156 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectificati

文件：164.5 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

QFN-8

ON

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QFN-8

Fairchild

仙童半导体

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