N-Channel PowerTrench MOSFET

Features • rDS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Resistor, Rg = 20Ω (Typ.) • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 42V Automotive Load Con

文件：214.83 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 22A@ TC=25℃ ·Drain Source Voltage- : VDSS=75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.8Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

文件：344.7 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS=75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.7Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

文件：344.71 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench MOSFET 75V, 80A, 4.7m?

Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 42V Automotive Load Control • Starter / Altern

文件：606.43 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench짰 MOSFET 150V, 167A, 5.9m

文件：706.25 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：349.57 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道 PowerTrench® MOSFET 75V、80A、3.8mΩ

N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ •RDS(on) = 3.5mΩ（典型值） @ VGS = 10V, ID = 80A\n•QG(tot) = 125nC（典型值） @ VGS = 10V\n•低米勒电荷\n•低 Qrr体二极管\n•UIS 能力（单脉冲和重复脉冲）;

ONSEMI

安森美半导体

N 沟道，PowerTrench® MOSFET，75V，80A，4.7mΩ

N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ •RDS(on) = 4.0mΩ（典型值）@ VGS = 10V, ID = 80A\n•QG(tot) = 92nC（典型值）@ VGS = 10V\n•低米勒电荷\n•低 Qrr体二极管\n•UIS 能力（单脉冲和重复脉冲）;

ONSEMI

安森美半导体

N 沟道 PowerTrench® MOSFET 150V，167A，5.9mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •RDS(on) = 4.8mΩ （典型值）@ VGS = 10V, ID = 120A\n•快速开关速度\n•低栅极电荷，QG = 92nC（典型值）\n•高性能沟道技术可实现极低的 RDS(on)\n•高功率和高电流处理能力\n•符合 RoHS 标准;

ONSEMI

安森美半导体