N-Channel MOSFET

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 120mΩ(Max)@VGS= 10V APPLICATIONS ·Lighting ·Uninterruptible Power Supply ·AC-DC Power Supply

文件：345.47 Kbytes 页数：2 Pages

ISC

无锡固电

50A,500V N-Channel Type Planar Process Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-247

文件：980.91 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：325.09 Kbytes 页数：2 Pages

ISC

无锡固电

500V N-Channel MOSFET, FRFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：1.13791 Mbytes 页数：7 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 48A, 500V, RDS(on)= 0.105Ω@VGS= 10 V • Low gate charge ( typical 105 nC) •Low Crss ( typical 45 pF) •Fast switchin

文件：497.93 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS=55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode

文件：343.2 Kbytes 页数：2 Pages

ISC

无锡固电

Information Only Data Sheet

ULTRA FAST DIODE Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY

文件：43.16 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

High Speed Switching Diodes

High Speed Switching Diodes

文件：32.61 Kbytes 页数：1 Pages

FAIRCHILD

仙童半导体