| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.216Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch 文件:344.19 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced r DS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature pp Switch Mo 文件:188.33 Kbytes 页数:6 Pages | Fairchild 仙童半导体 | Fairchild | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 210A@ TC=25℃ ·Drain Source Voltage- : VDSS=75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m 文件:344.11 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m 文件:344.18 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Applications 文件:183.13 Kbytes 页数:6 Pages | Fairchild 仙童半导体 | Fairchild | ||
High Conductance Low Leakage Diode High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics 文件:235.1 Kbytes 页数:9 Pages | Fairchild 仙童半导体 | Fairchild | ||
High Conductance Low Leakage Diodes High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics 文件:37.88 Kbytes 页数:1 Pages | Fairchild 仙童半导体 | Fairchild | ||
High Conductance Low Leakage Diodes High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics 文件:37.88 Kbytes 页数:1 Pages | Fairchild 仙童半导体 | Fairchild | ||
High Conductance Low Leakage Diode High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics 文件:235.1 Kbytes 页数:9 Pages | Fairchild 仙童半导体 | Fairchild | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 34A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.115Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch 文件:344.39 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC |
技术参数
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
75
- VGS Max (V):
±20
- VGS(th) Max (V):
4
- ID Max (A):
80
- PD Max (W):
450
- RDS(on) Max @ VGS = 10 V(mΩ):
3.8
- Qg Typ @ VGS = 10 V (nC):
125
- Ciss Typ (pF):
8665
- Package Type:
TO-247-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DISCRETE |
30 |
FSC |
3600 |
询价 | |||
N/A |
24+/25+ |
28000 |
原装正品现货库存价优 |
询价 | |||
仙童 |
05+ |
TO-247 |
450 |
原装进口 |
询价 | ||
TOKO |
24+ |
1331 |
询价 | ||||
FAIRCHILD |
24+ |
原装正品 |
10500 |
原装现货假一罚十 |
询价 | ||
25+ |
TO-3P |
18000 |
原厂直接发货进口原装 |
询价 | |||
FSC |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
FAIRCHILD |
24+ |
原厂原封 |
6523 |
进口原装公司百分百现货可出样品 |
询价 | ||
原厂 |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
询价 | ||
FSC |
24+ |
TO247 |
5000 |
全现原装公司现货 |
询价 |
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