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FDH20N40

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.216Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch

文件:344.19 Kbytes 页数:2 Pages

ISC

无锡固电

FDH20N40

20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET

Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced r DS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature pp Switch Mo

文件:188.33 Kbytes 页数:6 Pages

Fairchild

仙童半导体

FDH210N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 210A@ TC=25℃ ·Drain Source Voltage- : VDSS=75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

文件:344.11 Kbytes 页数:2 Pages

ISC

无锡固电

FDH27N50

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

文件:344.18 Kbytes 页数:2 Pages

ISC

无锡固电

FDH27N50

27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET

Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Applications

文件:183.13 Kbytes 页数:6 Pages

Fairchild

仙童半导体

FDH300

High Conductance Low Leakage Diode

High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics

文件:235.1 Kbytes 页数:9 Pages

Fairchild

仙童半导体

FDH300

High Conductance Low Leakage Diodes

High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics

文件:37.88 Kbytes 页数:1 Pages

Fairchild

仙童半导体

FDH333

High Conductance Low Leakage Diodes

High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics

文件:37.88 Kbytes 页数:1 Pages

Fairchild

仙童半导体

FDH333

High Conductance Low Leakage Diode

High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics

文件:235.1 Kbytes 页数:9 Pages

Fairchild

仙童半导体

FDH34N40

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 34A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.115Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch

文件:344.39 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    75

  • VGS Max (V):

    ±20

  • VGS(th) Max (V):

    4

  • ID Max (A):

    80

  • PD Max (W):

    450

  • RDS(on) Max @ VGS = 10 V(mΩ):

    3.8

  • Qg Typ @ VGS = 10 V (nC):

    125

  • Ciss Typ (pF):

    8665

  • Package Type:

    TO-247-3

供应商型号品牌批号封装库存备注价格
DISCRETE
30
FSC
3600
询价
N/A
24+/25+
28000
原装正品现货库存价优
询价
仙童
05+
TO-247
450
原装进口
询价
TOKO
24+
1331
询价
FAIRCHILD
24+
原装正品
10500
原装现货假一罚十
询价
25+
TO-3P
18000
原厂直接发货进口原装
询价
FSC
16+
TO-220
10000
全新原装现货
询价
FAIRCHILD
24+
原厂原封
6523
进口原装公司百分百现货可出样品
询价
原厂
23+
TO-3P
5000
原装正品,假一罚十
询价
FSC
24+
TO247
5000
全现原装公司现货
询价
更多FDH供应商 更新时间2025-11-30 9:01:00