27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET

Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Applications

文件：183.13 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

文件：344.18 Kbytes 页数：2 Pages

ISC

无锡固电

27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET

ONSEMI

安森美半导体

Avalanche Rated N-channel MOSFET

文件：125 Kbytes 页数：2 Pages

SSDI

Avalanche Rated N-channel MOSFET

文件：125 Kbytes 页数：2 Pages

SSDI