丝印：FDH3632；Package：TO-247；N-Channel PowerTrench® MOSFET 100 V, 80 A, 9 mΩ

Features • RDS(ON) = 7.5 mΩ (Typ.), VGS = 10 V, ID = 80 A • Qg(tot) = 84 nC (Typ.), VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • RoHS Compliant Applications • Micro Solar Inverter • Motor Drives and Uninterruptible Power Supp

文件：920.29 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench MOSFET

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distribute

文件：310.36 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：405.53 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道 PowerTrench® MOSFET 100V，80A，9mΩ

N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ •RDS(on) = 7.5mΩ（典型值） @ VGS = 10V, ID = 80A\n•QG(tot) = 84nC（典型值） @ VGS = 10V\n•低米勒电荷\n•低 Qrr体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合 RoHS 标准;

ONSEMI

安森美半导体