isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -90A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) @VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

丝印：FDD9509L；Package：D-PAK；MOSFET - P-Channel PowerTrench

文件：337.82 Kbytes 页数：7 Pages

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安森美半导体

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：FDD9509L

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安森美半导体

P 沟道，PowerTrench® MOSFET，-40 V，-100 A，4.4 mΩ

P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ • Typical RDS(on) = 6.0 mΩ at VGS = -10V, ID = -70 A\n• Typical Qg(tot) = 50 nC at VGS = -10V, ID = -70 A\n•UIS Capability\n•RoHS Compliant\n• Qualified to AEC Q101;

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安森美半导体