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FDD6680

30V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •46A,30VRDS(ON)=10mΩ@V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDD6680

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=46A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FDD6680

N-Channel Logic Level PWM Optimized PowerTrench??MOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •46A,30VRDS(ON)=10mΩ@V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDD6680

30V N-Channel PowerTrench MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDD6680A

N-Channel, Logic Level, PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDD6680A

30V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDD6680A

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=56A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FDD6680AS

30V N-Channel PowerTrench SyncFET

GeneralDescription TheFDD6680ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6680ASincludesanintegratedSchottkydiode

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDD6680AS

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FDD6680AS

30V N -Channel MOSFET

Features •IncludesSyncFETSchottkybodydiode •Lowgatecharge(21nCtypical) •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability •VDS(V)=30V •ID=50A(VGS=10V) •RDS(ON)

UMWUMW

友台友台半导体

UMW

FDD6680AS_NL

30V N-Channel PowerTrench SyncFET

GeneralDescription TheFDD6680ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6680ASincludesanintegratedSchottkydiode

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDD6680S

30V N-Channel PowerTrench SyncFET?

GeneralDescription TheFDD6680SisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6680SincludesanintegratedSchottkydiodeusin

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDD6680S

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FDD6680AS

30V N-Channel PowerTrench짰 SyncFET?

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDD6680AS_08

30V N-Channel PowerTrench짰 SyncFET?

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FDD6680-NL

N-Channel 30-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

6680

ANDgate

FESTOFesto Corporation.

费斯托公司德国FESTO费斯托(中国)有限公司

FESTO

6680A

6680ASeriesSingle-Output,5000WDCPowerSupplies,GPIB

KEYSIGHTKeysight Technologies

德科技(中国德科技(中国)有限公司

KEYSIGHT

AP6680AGM

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

AP6680BGM-HF

LowerGateCharge,SimpleDriveRequirement

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

详细参数

  • 型号:

    FDD6680

  • 功能描述:

    MOSFET 30V N-Ch PowerTrench

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
TO-252
12300
全新原装真实库存含13点增值税票!
询价
FAIRCHILD
0735+
TO-252
27450
原盘原标
询价
FAIRCHILD/仙童
22+
TO-252
1118
只做原装进口 免费送样!!
询价
FSC
2017+
TO-252
52145
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
FAIRCHILD/FSC/仙童飞兆半
2008++
TO-252
57200
新进库存/原装
询价
FSC
03+
TO-252
1436
现货-ROHO
询价
仙童
06+
TO-252
12000
原装
询价
FAIRCHIL
23+
SOT252
9365
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
FSC
2020+
TO252
3770
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FSC
2016+
TO-252
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多FDD6680供应商 更新时间2024-4-27 15:30:00