N-Channel Logic Level PWM Optimized PowerTrench??MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 10 mΩ @ V

文件：199.03 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features • 46 A, 30 V RDS(ON) = 10 mΩ @ V

文件：121.05 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=46A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：330.9 Kbytes 页数：2 Pages

ISC

无锡固电

30V N-Channel PowerTrench MOSFET

文件：121.05 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level PWM Optimized PowerTrench™ MOSFET

ONSEMI

安森美半导体

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：1.04329 Mbytes 页数：4 Pages

BYCHIP

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=56A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =9.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：331.19 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel, Logic Level, PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS

文件：200.47 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS

文件：126.83 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

30V N-Channel PowerTrench SyncFET

General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode

文件：123.02 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体