FDD4243

丝印：40P30；Package：TO-252-3L；P-Channel Enhancement Mode MOSFET

Features Vos=-40VID=-30A RDS(ON)

FDD4243

丝印：FDD4243；Package：TO-252；P-Channel MOSFET

Features HighperformancetrenchtechnologyforextremelylowrDS(on) RoHSCompliant VDS(V)=-40V RDS(ON)

FDD4243

P-channel Enhancement Mode Power MOSFET

Features VDS=-40V,ID=-40A RDS(ON)

FDD4243

丝印：FDD4243；Package：TO-252；P-Channel MOSFET

Features HighperformancetrenchtechnologyforextremelylowrDS(on) RoHSCompliant VDS(V)=-40V RDS(ON)

FDD4243

40V P-Channel PowerTrench MOSFET -40V, -14A, 44mohm

Features ■TyprDS(on)=36mΩatVGS=-10V,ID=-6.7A ■TyprDS(on)=48mΩatVGS=-4.5V,ID=-5.5A ■TypQg(TOT)=21nCatVGS=-10V ■HighperformancetrenchtechnologyforextremelylowrDS(on) ■RoHSCompliant ■QualifiedtoAECQ101 Applications ■Inverter ■

FDD4243

P 沟道，PowerTrench® MOSFET，-40V，-14A，44mΩ; •最大rDS(on) = 44mΩ（VGS = -10V且ID = -6.7A时）\n•最大rDS(on) = 64mΩ（VGS = 4.5V且ID = 5.5A时）\n•高性能沟道技术可实现极低的rDS(on)\n•符合 RoHS 标准\n;

此P沟道MOSFET采用飞兆半导体专有的PowerTrench®技术生产，具有低rDS(on)和优化的Bvdss能力，在各种应用中都具有卓越的表现。

FDD4243

40V P-Channel PowerTrench짰 MOSFET

FDD4243

P-Channel 4 0 V (D-S) MOSFET

FDD4243_F085

P 沟道，PowerTrench® MOSFET，-40V，-14A，64mΩ; •典型 rDS(on) = 36 mΩ （VGS = -10 V、ID = -6.7 A）\n•VGS = -4.5V，ID = -5.5A时，典型rDS(on) = 48mΩ \n•VGS = -10V时，典型Qg(TOT) = 21nC\n•高性能沟道技术可实现极低的rDS(on)\n•符合 RoHS 标准\n•符合 AEC Q101\n;

P-Channel PowerTrench® MOSFET, -40V, -14A, 64mΩ

FDD4243_07

40V P-Channel PowerTrench짰 MOSFET