200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 4.9 A, 2

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.9A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =720mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200 V, ID= 8 A RDS(ON)

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Bychip

百域芯

200V N-Channel PowerTrench MOSFET

ONSEMI

安森美半导体

丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

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TECHPUBLIC

台舟电子