N-Channel, PowerTrench??MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • 38 A, 60 V. RDS(on) = 0.02

文件：83.16 Kbytes 页数：4 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=38A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =21mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件：763.2 Kbytes 页数：4 Pages

Bychip

百域芯

N 沟道，PowerTrench® MOSFET，38A，21mΩ

此N沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大程度地降低导通阻抗并保持低栅极电荷以获得卓越开关性能而定制的。 •38 A，60 V\n•RDS(on) = 0.021 Ω @ VGS = 10 V\n•RDS(on) = 0.025 Ω @ VGS = 6 V\n•低栅极电荷（典型值33 nC）。\n•开关速度快。\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体