FDC658P中文资料仙童半导体数据手册PDF规格书
FDC658P规格书详情
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
特性 Features
■ -4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V
RDS(ON) = 0.075 Ω @ VGS = -4.5 V.
■ Low gate charge (8nC typical).
■ High performance trench technology for extremely low
RDS(ON).
■ SuperSOTTM-6 package: small footprint (72 smaller than
standard SO-8); low profile (1mm thick).
产品属性
- 型号：
FDC658P
- 功能描述：
MOSFET SSOT-6 P-CH -30V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2450+ |
SOT23-6 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
FAIRCHILD |
20+ |
SOT23-6 |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FDC658P |
25+ |
525 |
525 |
询价 | |||
ON |
24+ |
SOT23-6 |
8000 |
新到现货，只做全新原装正品 |
询价 | ||
FSC |
23+ |
SOT163 |
65480 |
询价 | |||
FAIRCHILD |
20+ |
SOP6-Pb |
2960 |
诚信交易大量库存现货 |
询价 | ||
FAIRCILD |
22+ |
SMD |
8000 |
原装正品支持实单 |
询价 | ||
Fairchild(飞兆/仙童) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
FAIRCHILD |
25+ |
SOT163 |
96000 |
公司大量原装现货,欢迎来电 |
询价 | ||
ON |
23+ |
SOT23-6 |
12000 |
正规渠道,只有原装! |
询价 |
