零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
FDC642P | P-Channel 2.5V Specified PowerTrench?줞OSFET P-Channel2.5VSpecifiedPowerTrench™MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FDC642P | P 沟道,PowerTrench® MOSFET,2.5V 指定,-20 V,-4.0 A,65mΩ; •VGS = -4.5V,ID = -4.0A时,最大rDS(on) = 65mΩ\n•VGS = -2.5V,ID = -3.2A时,最大rDS(on) = 100mΩ\n•快速开关速度。\n•低栅极电荷(典型值11nC)。\n•高性能沟道技术可实现极低的rDS(ON)。\n•SuperSOT™-6封装: 小尺寸(比标准SO-8封装小72%);薄型(1mm厚)\n•终端无引线且符合RoHS标准\n; 此N沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产,这一先进工艺是专为最大程度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件经过专门设计,能以极小的尺寸提供出色的功耗,适合那些不宜采用更大封装的应用。 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
P-Channel PowerTrench짰 MOSFET -20V, -4A, 100m廓 Features ■TyprDS(on)=52.5mΩatVGS=-4.5V,ID=-4A ■TyprDS(on)=75.3mΩatVGS=-2.5V,ID=-3.2A ■Fastswitchingspeed ■Lowgatecharge(6.9nCtypical) ■HighperformancetrenchtechnologyforextremelylowrDS(on) ■SuperSOTTM-6package:smallfootprint(72smallerthanstandardSO | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FDC642P P-Channel 2.5V specified PowerTrench MOSFET Features ■TyprDS(on)=52.5mΩatVGS=-4.5V,ID=-4A ■TyprDS(on)=75.3mΩatVGS=-2.5V,ID=-3.2A ■Fastswitchingspeed ■Lowgatecharge(6.9nCtypical) ■HighperformancetrenchtechnologyforextremelylowrDS(on) ■SuperSOTTM-6package:smallfootprint(72smallerthanstandardSO | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P 沟道,PowerTrench® MOSFET,-20V,-4A,100mΩ; •典型 rDS(on) = 52.5 mΩ (VGS = –4.5 V、ID = –4A)\n•典型 rDS(on) = 75.3 mΩ (VGS = –2.5 V、ID = –3.2 A)\n•快速开关速度\n•低栅极电荷(6.9nC典型值)\n•高性能沟道技术可实现极低的rDS(on)\n•SuperSOTÞ–封装:小尺寸(比标准 SO-8 小 72%);超薄(1 mm 厚)。\n•符合 RoHS 标准\n•符合 AEC Q101\n; P-Channel PowerTrench® MOSFET, -20V, -4A, 100mΩ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
丝印:FDC642P;Package:SSOT-6;MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m Features •TypRDS(on)=52.5matVGS=−4.5V,ID=−4A •TypRDS(on)=75.3matVGS=−2.5V,ID=−3.2A •FastSwitchingSpeed •LowGateCharge(6.9nCTypical) •HighPerformanceTrenchTechnologyforExtremelyLowRDS(on) •SUPERSOT−6Package:SmallFootprint(72Smallerthan S | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
丝印:FDC642P;Package:SSOT-6;MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m Features •TypRDS(on)=52.5matVGS=−4.5V,ID=−4A •TypRDS(on)=75.3matVGS=−2.5V,ID=−3.2A •FastSwitchingSpeed •LowGateCharge(6.9nCTypical) •HighPerformanceTrenchTechnologyforExtremelyLowRDS(on) •SUPERSOT−6Package:SmallFootprint(72Smallerthan S | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
技术参数
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
P-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
-20
- VGS Max (V):
8
- VGS(th) Max (V):
-1.5
- ID Max (A):
-4
- PD Max (W):
1.6
- RDS(on) Max @ VGS = 2.5 V(mΩ):
100
- RDS(on) Max @ VGS = 4.5 V(mΩ):
65
- Qg Typ @ VGS = 4.5 V (nC):
13
- Qg Typ @ VGS = 10 V (nC):
11
- Ciss Typ (pF):
700
- Package Type:
TSOT-23-6
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
SOT153 |
154501 |
明嘉莱只做原装正品现货 |
询价 | ||
ONSEMI/安森美 |
25+ |
SOT23-6 |
34696 |
ONSEMI/安森美全新特价FDC642P即刻询购立享优惠#长期有货 |
询价 | ||
FAIRCHILD |
16+ |
SSOT-6 |
13500 |
进口原装现货/价格优势! |
询价 | ||
ON/安森美 |
2019+ |
TSOP-6 |
78550 |
原厂渠道 可含税出货 |
询价 | ||
FAIRCHILD |
10+ |
SOT23-6 |
18000 |
全新原装公司现货
|
询价 | ||
ON |
23+ |
SOT23-6 |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD |
24+ |
SOT23-6 |
18000 |
原厂授权代理 价格绝对优势 |
询价 | ||
ON/安森美 |
22+ |
SOT23-6 |
12000 |
原装正品 |
询价 | ||
FAIRCHILD/仙童 |
2019+PB |
SOT-23-6 |
62000 |
原装正品 可含税交易 |
询价 | ||
ON/安森美 |
2021+ |
NA |
9000 |
原装现货,随时欢迎询价 |
询价 |
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