P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V

文件：359.42 Kbytes 页数：8 Pages

Fairchild

仙童半导体

P-Channel 1.8V Specified PowerTrench MOSFET

ONSEMI

安森美半导体

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V

文件：359.42 Kbytes 页数：8 Pages

Fairchild

仙童半导体

-20V P-Channel Enhancement Mode MOSFET

Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

文件：1.68433 Mbytes 页数：5 Pages

UMW

友台半导体

P-Channel 1.8V Specified PowerTrench MOSFET

文件：91.48 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P-Channel 1.8V Specified PowerTrench MOSFET

文件：91.48 Kbytes 页数：5 Pages

Fairchild

仙童半导体

P 沟道，PowerTrench® MOSFET，1.8V Specified，-20V，-5.5A，33mΩ

此P沟道1.8V额定MOSFET采用飞兆的低电压PowerTrench工艺。 它已针对电池的电源管理应用进行了优化。 •-5.5 A, -20 V\n•RDS(on) = 33 mΩ @ VGS = -4.5V\n•RDS(on) = 43 mΩ @ VGS = -2.5V\n•RDS(on) = 60 mΩ @ VGS = -1.8V\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体