FDC604中文资料仙童半导体数据手册PDF规格书

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.

特性 Features

• –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V

RDS(ON) = 43 mΩ @ VGS = –2.5 V

RDS(ON) = 60 mΩ @ VGS = –1.8 V

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON)

Applications

• Battery management

• Load switch

• Battery protection